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| savantic semiconductor product specification silicon npn power transistors 2SC1433 description with to-3 package high voltage ,high speed applications for high voltage switching power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p t total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1433 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 400 v v (br)ebo emitter-base breakdown votage i e =1.0ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5 a;i b =1a 1.5 v v besat base-emitter saturation voltage i c =5 a;i b =1a 2.0 v i cbo collector cut-off current v cb =600v;i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 20 300 savantic semiconductor product specification 3 silicon npn power transistors 2SC1433 package outline fig.2 outline dimensions |
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